2SK2110 |
RFQ for 2SK2110 |
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| Product | Manufacturers | Pack | D/C |
| 2SK2110 | - | SOT-89 | 05+ |
Features |
| • Low ON resistance R DS(on) = 1.5 MAX. @VGS = 4.0 V, ID = 0.3 A• High switching speed ton + toff < 100 ns• Low parasitic capacitance |
| PARAMETER |
SYMBOL |
TEST CONDITIONS |
RATING |
UNIT |
| Drain to Source Voltage |
VDSS |
VGS = 0 |
100 |
V |
| Gate to Source Voltage |
VGSS |
VDS = 0 |
±20 |
V |
| Drain Current (DC) |
I D(DC) |
±0.5 |
A | |
| Drain Current (Pulse) |
I D(pulse) |
PW 10 ms Duty cycle 50 % |
±1.0 |
A |
| Total Power Dissipation |
PT |
16 cm2 * 0.7 mm, ceramic substrate used |
2.0 |
W |
| Channel Temperature |
Tch |
150 |
°C | |
| Storage Temperature |
Tstg |
55 to +150 |
°C |
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